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Hitachi S8010 FESEM

配备Hitachi最新型号 SU8010 FESEM/EDX,能为芯片剥层提供更好的观察能力。

SU8010
SU8020
SU8030
SU8040
Secondary Electron Image Resolution 1.0 nm (Vacc 15 kV, WD=4 mm)(*1)
1.3 nm (landing voltage 1kV, WD=1.5 mm)(*1)
Mag Low mag mode 20-2,000x (Magnifi cation on Photo)(*2)
80-5,000x (Magnifi cation on display)(*3)
High mag mode 100-800,000x (Magnifi cation on Photo)(*2) 80-800,000x (Magnifi cation on Photo)(*2)
400-2,000,000x (Magnifi cation on display)(*3) 300-2,000,000x (Magnifi cation onisplay)(*3)
Electron Optics Electron gun Cold cathode field emission source
Accelerating voltage 0.5 kV to 30 kV (Standard mode)
Landing voltage 0.1 kV to 2.0 kV (Deceleration mode)
Objective lens aperture Objective aperture (Heating type), 4openings, selectable from outside of vacuum
Electrical Image Shift ±12µm (WD=8 mm)
Specime Stage Stage Control 3-axis motor drive
5-axis motor drive(*4)
5-axis motor drive 5-axis motor drive (Regulus Stage)
Traverse range X 0 - 50 mm 0 - 110 mm
Y 0 - 50 mm 0 - 110 mm 0 - 80 mm
R 360°
T -5 - 7°
Z 1.5 - 30 mm 1.5 - 40 mm
Max. sample size 100 mm dia. (Maximum) 150 mm dia. (Maximum)
150 mm dia.(*4) 200 mm dia.(*4)
-
Stage repeatability
-
-
-
less than ±0.5µm
Detector Secondary electron detector Lower/Upper Lower/Upper/Top
SE/BSE Signal Mixing Function (Upper detector)
Backscattered Electron Detector Semiconductor type BSED(*4)
YAG BSED(*4)
Transmission Electron Detector STEM detector (for BF-STEM)(*4)
BF-STEM aperture(*4)
DF-STEM holder(*4)
Other Energy dispersive X-ray spectrometer(*4)
Faraday cup(*4)
EBIC image observation unit(*4)

 
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